Method and system for performing equipotential sensing across a memory array to eliminate leakage currents

摘要

A method and system for minimizing a leaked current within an array of memory cells as well as a method and system for differentiating a resistive value within a sensed memory cell during a read operation are disclosed. The memory array includes a plurality of bit lines and word lines that are cross-coupled via a plurality of memory cells. Each memory cell is limited in providing a conductive path in a first direction only by way of a unidirectional element. Such unidirectional elements typically comprise of diodes. The apparatus utilizes the diodes to form a current path from the bit line to the word line having passed through the diode and resistive memory cell. Further, a differential sense amplifier is utilized to differentiate the sensed current during a read operation from a reference value after an equipotential value is placed across the array to limit leakage current from developing within adjoining word and bit lines during a sense operation of a given memory cell.