METHOD FOR MANUFACTURING CMOS IMAGE SENSOR USING BUTTING CONTACT

摘要

PURPOSE: A method for manufacturing a CMOS image sensor is provided to improve yield of the image sensor by using butting contact between a gate and a drain of a drive transistor. CONSTITUTION: A drive transistor including a source/drain and a gate electrode(31) is formed on a substrate(30). After a metal film is formed on the resultant structure, the metal film is partially exposed by using a photoresist pattern. Silicon atoms are implanted into the exposed metal film. By annealing the resultant structure, a metal silicide layer(35") is formed for butting contact between the gate electrode and the drain. Then, a metal interconnection(40) is formed on the metal silicide layer.