| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film semiconductor device having satisfactory transistor characteristics by a low temperature process. SOLUTION: After the deposition of an amorphous semiconductor film on an insulating substrate, the heat treatment of the substrate on which the amorphous semiconductor film is formed is carried out under a weak oxidizing atmosphere so that a crystalline semiconductor film can be formed. The weak oxidizing atmosphere is manufactured by oxygen, and the oxygen partial pressure is set so as to be ranging from 5 mtorr to 50 torr. This manufacturing method is provided to widely and uniformly manufacture a thin film transistor(TFT) having satisfactory transistor characteristics in a low temperature process by a simple method. COPYRIGHT: (C)2004,JPO
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