| 摘要 |
<P>PROBLEM TO BE SOLVED: To resolve problems wherein the reflectivity of a reflective liquid crystal panel largely changes due to dispersion in the thickness of passivation film or refractive index of liquid crystal varies, when silicon nitride film is used for the reflective liquid crystal panel, since silicon nitride film formed by a reduced CVD method and generally used as the passivation film in a semiconductor device, causes about 10% dispersion in the film thickness. <P>SOLUTION: The substrate for the liquid crystal panel has constitution such that reflection electrodes (14) are formed on the substrate (1) in a state of matrix, transistors are formed in correspondence with the respective electrodes, and voltage is applied to the electrodes via the transistors. Silicon oxide film having a thickness of 500-2,000 Å is used as the passivation film (17) and the film thickness is set at a proper value according to the wavelength of incident light. <P>COPYRIGHT: (C)2004,JPO |
