| 摘要 |
1,038,900. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. Dec. 1, 1964 [Dec. 30, 1963], No. 48679/64. Heading H1K. The channel of a unipolar transistor comprises a thin layer between two gate regions of different materials and opposite conductivity types, the channel being of the same material as one of the gate regions but of the opposite conductivity type. In a first embodiment, Fig. 1 (not shown), the device is fabricated by epitaxially depositing an N-type Ge region 3 from the vapour phase on to a P-type GaAs substrate 20 , an inversion layer 12 being formed which constitutes the channel. Ohmic contacts 5, 6, 7 and 8 are applied to the two gate regions and the ends of the channel respectively. As shown, Fig. 2, N-type Ge region 22 is formed on P-type GaAs substrate 20 forming P-type Ge inversion layer 27 which is contacted by P-type Ge source and drain regions 21 and 23. In a further embodiment, Fig. 3 (not shown), the channel comprises a thin P-type Ge layer 31 epitaxially deposited on a P-type GaAs substrate 30. The central portion of layer 31 is masked and deposition continued to produce thicker source and drain regions 32a, 32b, and N-type Ge is then deposited over the central portion to produce the second gate region 33. Complementary devices may also be produced. |
