| 摘要 |
An apparatus for manufacturing a semiconductor device includes a chamber, upper and lower electrodes spacing apart and facing each other in the chamber, the upper and lower electrodes supplied with high frequency power to form plasma, an electrostatic chuck on the lower electrode and settling a substrate thereon, a chuck base between the electrostatic chuck and the lower electrode, and protecting the electrostatic chuck, and a helium line supplying helium gas to a gap between the substrate and the electrostatic chuck, the helium line filled with a plurality of fine insulating balls.
|
