| 摘要 |
PROBLEM TO BE SOLVED: To provide the configuration and method of a lateral bipolar transistor. SOLUTION: An embedded base contact 128 is formed, and a base 138 is formed in a well region. The well region 148 encloses a collector region 192 in a lateral PNP type transistor. A contact to a collector and a heavily doped emitter 190 are respectively formed in a collector well and a base well. The lightly doped collector well creates a depletion region between the collector and the base to perform an operation with a high voltage. The base/collector junction turns into the bonding of the collector well and the base well so that an interval between the collector and the emitter can be shortened. Thus, the injection of a carrier from successively biased base/emitter junction to reversely biased base/collector junction can be made large. Therefore, the performance of the lateral PNP type transistor can be improved. Thus, this can be easily introduced to BiCMOS treatment, and made together with second bipolar treatment. COPYRIGHT: (C)2004,JPO
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