| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the rear processing method of a wafer to form a trench on the front surface of a wafer by sawing or etching, to grind the wafer from the base side, to fill the trench with protective materials, to coat the base front surface as the surface layer, and to harden it. <P>SOLUTION: In this method, a trench is formed on the front surface of wafer 1 by sawing or etching, the wafer 1 is ground from the base side, the trench is filled with protective materials 8, which is also applied to the base surface as the surface layer. Then, the protective materials 8 are hardened in order to carry out the sawing process. In another embodiment of this method, double thin film layers are formed on the rear face of the wafer 1 including a mounting tape 6 and a protective layer 8 faced to the rear face of the wafer 1. <P>COPYRIGHT: (C)2004,JPO |
