| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist material which excels not only in transmittance to vacuum UV light but in an etching resistance and more particularly a chemically amplified resist material and a pattern forming method using the same. <P>SOLUTION: The resist material contains a polymeric compound (i) including the recurring units k and m expressed by chemical formula (1) (R<SP>1</SP>and R<SP>2</SP>are hydrogen atoms or acid-labile groups and 0<k<1, 0<m<1, and 0<k+m≤1) and a polymeric compound (ii) including the recurring units in which the hydrogen atoms of carboxyl groups are substituted with the acid-labile groups. <P>COPYRIGHT: (C)2004,JPO |
