SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

A ZnSe light-emitting device emitting light from an output face comprises an n- type ZnSe substrate including self-active luminescence centers (SA), an acti ve layer formed on the n-type ZnSe substrate, and an Al layer provided the opposite side to the output face and serving to reflect light toward the output face. The emitted light is effectively used, the luminance is high, a nd the chromaticity of the white light-emitting device can be easily adjusted.< /SDOAB>