| 摘要 |
PROBLEM TO BE SOLVED: To produce a thin film deposition method by a CVD (Chemical Vapor Deposition) method with which a silica thin film and a metallic thin film of titanium oxide, ITO (Indium Tin Oxide) or the like can uniformly be deposited on a base material such as a plastic film, a film deposition rate is high, peripheral circuits used for the system are not complicated, and a film deposition state is not changed and stable. SOLUTION: A prescribed gas is introduced into a reaction chamber 4, a base material 1 on a film deposition drum 8, and a counter electrode 9 are set, and a reactive gas is made into plasma to deposit a thin film 12 on the base material 1. In the method, a system of continuously winding up the base material 1 from a roll 2 to a roll 2' is used, and a plasma power source 10 is supplied to one or more selected from the film deposition drum 8 and the counter electrode 9. Further, the frequency of the power source is≤50 kHz. A magnet 13 is arranged at one or more selected from the film deposition drum 8 and the counter electrode 9 in the reaction chamber 4. Further, roll parts 7 and 7' conveying the base material 1 and brought into contact with the base material 1 have impedance of≥1 kΩfrom a ground. COPYRIGHT: (C)2004,JPO
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