发明名称 |
Ion implant method for topographic feature corner rounding |
摘要 |
Within a method for forming a microelectronic fabrication, there is ion implanted into a corner of a topographic feature within a microelectronic substrate a dose of an implanting ion such as to effect rounding of the corner of the topographic feature when thermally oxidizing the microelectronic substrate. The dose of the implanting ion is implanted while employing a laterally etched mask layer as an ion implantation mask layer which exposes the corner. The dose of the implanting ion is selected from the group consisting of silicon containing ions, germanium containing ions, arsenic containing ions, phosphorus containing ions and boron containing ions, such to provide for rounding of the corner with enhanced process efficiency.
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申请公布号 |
US2004005764(A1) |
申请公布日期 |
2004.01.08 |
申请号 |
US20020190248 |
申请日期 |
2002.07.05 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WU JIE-SHING;SUN HSUEH-LI |
分类号 |
H01L21/762;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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