STRUCTURE OF CONDUCTIVE CONTACT AND FABRICATING METHOD THEREFOR

摘要

PURPOSE: A structure of a conductive contact and a fabricating method therefor are provided to restrict the generation of defects and simplify a fabrication process by removing a CMP(Chemical Mechanical Polishing) process. CONSTITUTION: A structure of a conductive contact includes a substrate(102), a lower interlayer dielectric(120), a lower contact hole, a lower contact(130), an upper interlayer dielectric(150), an upper contact hole(154), and an upper contact(160). The lower interlayer dielectric(120) is formed on an upper surface of the substrate(102). The lower contact hole is used for exposing the substrate(102) through the lower interlayer dielectric(120). The lower contact(130) is formed on a sidewall or a bottom of the lower contact hole. The upper interlayer dielectric(150) is formed on the lower contact(130) having a groove. The upper contact hole(154) is used for exposing the lower contact(130). The upper contact(160) is used for filling the inside of the upper contact hole(154).