发明名称 |
Transistor structure of memory device and method for fabricating the same |
摘要 |
A memory device includes an active area protruding from a semiconductor substrate. A recess is formed in the active area. A field oxide layer is formed on the semiconductor substrate. A gate electrode extends across the active area while being overlapped with the recess. A gate insulation layer is interposed between the gate electrode and the active area. Source and drain areas are formed in the active area. The transistor structure above defines a recessed transistor structure if it is sectioned along a source-drain line and defines a Fin transistor structure if it is sectioned along a gate line. The transistor structure ensures sufficient data retention time and improves the current drivability while lowering the back bias dependency of a threshold voltage.
|
申请公布号 |
US7601583(B2) |
申请公布日期 |
2009.10.13 |
申请号 |
US20070962100 |
申请日期 |
2007.12.21 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JANG SE AUG;KIM YONG SOO;OH JAE GEUN;ROHH JAE SUNG;SOHN HYUN CHUL |
分类号 |
H01L29/72 |
主分类号 |
H01L29/72 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|