| 摘要 |
PURPOSE: A method for preventing the boron penetration of a semiconductor device is provided to be capable of restraining abnormal operation of the semiconductor device by preventing boron form being non-uniformly penetrated into a gate oxide layer through grain boundary. CONSTITUTION: A gate oxide layer(35a), an amorphous silicon layer(37a), and a column arrayed polysilicon layer(39a) are sequentially formed at the upper portion of a semiconductor substrate(31). A gate electrode(41) is then formed by selectively patterning the column arrayed polysilicon layer and the amorphous silicon layer. A source/drain(45) are formed at both sides of the gate electrode in the semiconductor substrate by carrying out an ion implantation.
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