| 摘要 |
PURPOSE: A method for forming an interlayer dielectric of a semiconductor device is provided to be capable of preventing the generation of voids when filling a contact hole. CONSTITUTION: A plurality of bit lines(20) and opening portions are alternately formed at the upper portion of a semiconductor substrate(10). At this time, each bit line is made of a barrier(14), a tungsten layer(16), and a hard mask(18). After coating the first interlayer dielectric(30) at the upper portion of the resultant structure by carrying out an SOG(Spin On Glass) process, the topology between the bit line and the opening portion, is improved by firstly filling the opening portion using a baking process. After carrying out an annealing process on the entire surface of the resultant structure, the topology is further improved by depositing the second interlayer dielectric on the entire surface of the resultant structure.
|
