| 摘要 |
PURPOSE: A method for forming a resist pattern of a semiconductor device is provided to be capable of preventing intermixing phenomenon when doubly coating resist at a semiconductor substrate. CONSTITUTION: After forming a pattern formation layer(11) at the upper portion of a semiconductor substrate, a resist layer containing a crosslinkable agent is formed at the upper portion of the pattern formation layer. After selectively carrying out an exposure at the resultant structure, the exposed resist portion is transformed into a crosslinkable portion by carrying out a post bake process. Then, a resist pattern(13c) is formed by carrying out a developing and etching process at the resultant structure. Preferably, the bake process is carried out by using an oven or a hot plate at the temperature of 50-250 °C.
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