METHOD FOR MANUFACTURING ISOLATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing an isolation layer of a semiconductor device is provided to be capable of minimizing the generation of moat due to the loss of a silicon nitride layer for uniformly conserving the electrical characteristics of the device. CONSTITUTION: A pad oxide layer(103) and a pad nitride layer(105) are sequentially deposited on a silicon substrate(100). A trench(106) is formed at the resultant structure by carrying out a photolithography process. An oxide layer(108) is formed at the inner portion of the trench. A silicon nitride layer(121), a silicon oxide layer(123), and a gap-fill oxide layer(125) are sequentially formed on the entire surface of the resultant structure. A CMP(Chemical Mechanical Polishing) process is carried out at the gap-fill oxide layer and the silicon oxide layer by using the silicon nitride layer as an etch stop layer. After carrying out a dry etching process at the silicon nitride layer, a wet etching process is carried out at the pad nitride layer.