METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to prevent a bridging phenomenon between cells by additionally performing a process in a piranha solution bath in a wet etch process of a cell region oxide layer. CONSTITUTION: The cell region oxide layer of the semiconductor device is etched in a buffered hydrogen fluoride(BHF) solution bath(100), including a cell region including a lower electrode and a peripheral region including a photoresist layer. The resultant structure is cleaned in a deionized(DI) water rinse bath(102). The photoresist layer is removed and the surface of the lower electrode is hydrophilic-oxidized. The resultant structure is cleaned in the DI water rinse bath. The resultant structure is dried in a dry unit(104).