| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of minimizing hot carrier effect by reinforcing an oxide layer at the edge portion of a gate. CONSTITUTION: After forming an isolation layer(33) at the inner portion of a semiconductor substrate(31), a nitride pattern is formed at an active region of the semiconductor substrate. The first oxide layer is formed at the upper portion of the resultant structure except the nitride pattern region. After removing the nitride pattern, the second oxide layer(41a) is additionally formed at the upper portion of the resultant structure. After sequentially forming a gate, a spacer, and a source/drain region at the predetermined portions of the resultant structure, the second and first oxide layers are selectively removed.
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