| 摘要 |
PURPOSE: An isolation method of a semiconductor device is provided to be capable of minimizing isolation width for improving the degree of integration. CONSTITUTION: After sequentially depositing a pad oxide layer(13) and a pad nitride layer at the upper portion of a semiconductor substrate(11), a polysilicon pattern is formed at the upper portion of the resultant structure. Then, a spacer is formed at one sidewall of the polysilicon pattern. After removing the polysilicon pattern, isolation regions are defined at the pad nitride layer by selectively patterning the pad nitride using the spacer as an etching mask. Trenches are then formed at the inner portion of the semiconductor substrate by selectively removing the pad oxide layer and the semiconductor substrate. An isolation layer(27) is formed at the inner portion of each trench.
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