| 摘要 |
PURPOSE: A method for manufacturing a capacitor is provided to be capable of preventing oxygen diffusion from a dielectric film to a lower electrode in annealing. CONSTITUTION: An oxygen diffusion barrier layer(22a) containing nitrogen is formed on a lower electrode(21). The first amorphous dielectric film(23a) is formed on the oxygen diffusion barrier layer. Plasma treatment using nitrogen is performed. Then, the second amorphous dielectric film(24) having a relatively thick thickness compared to the first dielectric film is formed on the resultant structure. By annealing the resultant structure, the dielectric films are crystallized and a nitrogen-rich layer(26) is simultaneously formed at the interface between the oxygen diffusion barrier layer(22a) and the first amorphous dielectric film(23a).
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