METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to minimize the loss of a gate electrode and a hard mask and to improve process margins when forming SAC(Self Align Contact). CONSTITUTION: An insulating layer(35) is formed on a substrate(30) having a plurality of conductive patterns(32). A hard mask(36) is formed by depositing a desired substance on the insulating layer and selectively etching the desired substance. An opening part is formed to define a contact region by selectively etching the insulating layer(35) using the hard mask(36) as a mask. An etch stop layer(39) is formed on the entire surface of the resultant structure. A contact hole(40) is then formed by selectively etching the etch stop layer and the insulating layer using different etching selectivity.