METHOD FOR FORMING CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact of a semiconductor device is provided to be capable of easily carrying out a gap-fill process. CONSTITUTION: A plurality of lower metal lines(105) are formed at the upper portion of a substrate(100). An insulating layer is formed at the upper portion of the resultant structure, wherein the insulating layer is made of the first TEOS(TetraEthylOrthoSilicate) layer(110), a FOX layer(115), and the second TEOS layer(120). After forming a photoresist pattern at the upper portion of the resultant structure, the first opening portion is formed at the insulating layer by carrying out an isotropic etching process. The second opening portion is formed at the lower portion of the first opening portion by carrying out an anisotropic etching process for exposing the lower metal line. After removing the photoresist pattern, the third opening portion is formed by carrying out the isotropic etching process at the first and second opening portion. Then, a via contact(180) is formed at the inner portion of the third opening portion.