| 摘要 |
PURPOSE: A semiconductor device is provided to eliminate hydrogen ions on the interface between a silicon substrate and a gate insulation layer by forming a Ti layer between mask insulation layers formed on a gate electrode in a transistor formation process. CONSTITUTION: The gate insulation layer(13) is formed on the silicon substrate(11). The gate electrode is formed on the gate insulation layer. The first mask insulation pattern is formed on the gate electrode. A Ti pattern absorbs the hydrogen ions on the interface between the silicon substrate and the gate insulation layer, formed on the first mask insulation pattern. The second mask insulation pattern is formed on the Ti pattern. An insulation spacer(23) is formed on the sidewall of the second mask insulation pattern, the Ti pattern, the first mask insulation pattern, the gate electrode and the gate insulation layer.
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