| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent a hump phenomenon of drain current and avoid a junction leakage current by forming a uniform surface in an active region and a field region after a chemical mechanical polishing(CMP) process is performed. CONSTITUTION: A pad oxide layer(22) and a pad nitride layer(23) are sequentially deposited on a substrate(21). The pad nitride layer, the pad oxide layer and a predetermined portion of the substrate are eliminated to define the field region. An oxide layer is deposited on the substrate to sufficiently fill the field region. A nitride thin film is formed on the oxide layer. A flat photoresist layer is formed on the nitride thin film. The photoresist layer, the nitride thin film and the field oxide layer are etched back by a predetermined thickness. The remaining photoresist layer is eliminated. A CMP process is performed by using the nitride layer pad as an end point.
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