摘要 |
PURPOSE: A reticle manufacturing method and an exposure method using the same are provided to be capable of preventing the CD(Critical Dimension) uniformity failure due to a reticle for improving the field CD uniformity of a wafer by improving a specific portion of the reticle. CONSTITUTION: After preparing a transparent substrate, a semi-transmitting layer(15) is located at the first predetermined portion of the transparent substrate. At this time, the semi-transmitting layer has a transmittancy of 85%, or higher. Then, a reticle(10) is completed by locating a chrome layer(17) at the second predetermined portion of the transparent substrate. Preferably, the transmittancy of the semi-transmitting layer is in the range of 85-98%. Preferably, the semi-transmitting layer and the chrome layer are located at the upper and lower portion of the transparent substrate, respectively.
|