发明名称 RETICLE MANUFACTURING METHOD AND EXPOSURE METHOD USING THE SAME
摘要 PURPOSE: A reticle manufacturing method and an exposure method using the same are provided to be capable of preventing the CD(Critical Dimension) uniformity failure due to a reticle for improving the field CD uniformity of a wafer by improving a specific portion of the reticle. CONSTITUTION: After preparing a transparent substrate, a semi-transmitting layer(15) is located at the first predetermined portion of the transparent substrate. At this time, the semi-transmitting layer has a transmittancy of 85%, or higher. Then, a reticle(10) is completed by locating a chrome layer(17) at the second predetermined portion of the transparent substrate. Preferably, the transmittancy of the semi-transmitting layer is in the range of 85-98%. Preferably, the semi-transmitting layer and the chrome layer are located at the upper and lower portion of the transparent substrate, respectively.
申请公布号 KR20040001525(A) 申请公布日期 2004.01.07
申请号 KR20020036757 申请日期 2002.06.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KO, CHA WON;PARK, SEONG NAM
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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