| 摘要 |
PURPOSE: A method for forming a contact plug of a semiconductor device is provided to reduce leakage current and contact resistance by performing an oxidation process and a cleaning process after a contact hole is formed. CONSTITUTION: An interlayer dielectric(40) is formed on a semiconductor substrate(10) including a gate electrode(20) and a source/drain region(30). A predetermined region of the interlayer dielectric is etched to form a contact hole for a contact plug exposing the source/drain region. The source/drain region exposed by the contact hole for the contact plug is oxidized to form an oxide layer on the exposed source/drain. The oxide layer is eliminated. The contact hole for the contact plug is filled with the contact plug(70).
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