METHOD FOR FABRICATING TRANSISTOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a transistor of a semiconductor device is provided to prevent a lowering effect of a refresh characteristic due to the increase of the energy field by reducing an overlapping phenomenon between a junction portion and an ion implantation region. CONSTITUTION: A channel region(62) is formed by using an insulating layer pattern of a substrate as a mask and implanting the first impurity into the substrate. An auxiliary source/drain region(64) is formed by implanting the second impurity into both sides of the channel region(62) adjacent to the insulating layer pattern. A gate electrode structure is formed within an opening portion of the insulating layer pattern. The first oxide layer is formed on the gate electrode structure. A gate electrode(74) is formed by patterning the insulating layer pattern. A source/drain region(76) is formed by implanting the third impurity into the substrate.