发明名称 |
Attenuating extreme ultraviolet (EUV) phase-shifting mask fabrication method |
摘要 |
An exemplary method of forming an attenuating extreme ultraviolet (EUV) phase-shifting mask is described. This method can include providing a multi-layer mirror over an integrated circuit substrate or a mask blank, providing a buffer layer over the multi-layer mirror, providing a dual element material layer over the buffer layer, and selectively growing features on the integrated circuit substrate or mask blank using a photon assisted chemical vapor deposition (CVD) process when depositing the dual element layer. |
申请公布号 |
US6673524(B2) |
申请公布日期 |
2004.01.06 |
申请号 |
US20010780275 |
申请日期 |
2001.02.09 |
申请人 |
GHANDEHARI KOUROS;LAFONTAINE BRUNO;SINGH BHANWAR |
发明人 |
GHANDEHARI KOUROS;LAFONTAINE BRUNO;SINGH BHANWAR |
分类号 |
G03F1/00;G03F1/08;G03F1/14;(IPC1-7):C08J7/18;G03F9/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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