| 摘要 |
A ternary content addressable memory (TCAM) having an array of cells arranged in rows and columns, each cell comprising of a main memory cell for storing a data bit and its complement and a pair of bit lines for carrying the data bit and its complement. A compare circuit having a pair of compare lines and an output node, the compare circuit coupled to the [data]main memory cell for comparing the data bit and its complement with corresponding compare lines and outputting a compared signal at the output node. A match circuit coupled to the output node of the compare circuit and a match input line and a match output line, the match circuit for selectively connecting the match input line to the match output line based on the compared signal. A mask memory cell for storing and outputting mask data and a mask circuit coupled to the match circuit and the match input line and the match output line for masking the compared signal or for selectively connecting the match input line to the match output line based on the mask data.
|
