发明名称 |
Low cost method of providing a semiconductor device having a high channel density |
摘要 |
A method of making a semiconductor device 10 by forming a first dielectric layer 140 on a substrate, etching through the first dielectric layer to form a trench 150 having a channel region 135 on a sidewall 160 of the trench, and laterally removing a portion of the first dielectric layer adjacent to the sidewall of the trench above the channel region for defining a source region 280 of the semiconductor device.
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申请公布号 |
US2004002222(A1) |
申请公布日期 |
2004.01.01 |
申请号 |
US20020184187 |
申请日期 |
2002.06.27 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC. |
发明人 |
VENKATRAMAN PRASAD |
分类号 |
H01L21/285;H01L21/336;H01L21/8234;(IPC1-7):H01L21/311;H01L21/302;H01L21/461 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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