| 摘要 |
By varying only the thickness of a known material having superior magnetic characteristics to increase spin polarization without changing the chemical composition, a tunnel magnetoresistive element capable of producing a larger magnetoresistive effect is provided. <??>The tunnel magnetoresistive element includes an underlayer (nonmagnetic or antiferromagnetic metal film) (1); an ultrathin ferromagnetic layer (2) disposed on the underlayer (1); an insulating layer (3) disposed on the ultrathin ferromagnetic layer (2); and a ferromagnetic electrode (4) disposed on the insulating layer (3). <IMAGE> |
