METHOD FOR FABRICATING LOCAL INTERCONNECTION OF STATIC RANDOM ACCESS MEMORY

摘要

PURPOSE: A method for fabricating a local interconnection of a static random access memory(SRAM) is provided to form a thick local interconnection by recessing a local interconnection formation region and by depositing a metal layer and performing a chemical mechanical polishing(CMP) process. CONSTITUTION: A gate electrode(23) and a field gate(24) are formed on a semiconductor substrate(21). An interlayer dielectric(26) is formed on the entire region of the substrate to cover the gate electrode and the field gate. Predetermined portions of the interlayer dielectric are etched to form the first and second contact holes respectively exposing the gate electrode and the field gate. A conductive layer is filled in the first and second contact holes to form the first and second contact plugs(27a,27b). A resist pattern is formed on the interlayer dielectric to expose the interlayer dielectric between the first and second contact plugs. A predetermined thickness of the exposed interlayer dielectric is etched. The resist pattern is removed. A metal layer is deposited on the interlayer dielectric including the recessed portion. The metal layer is polished to expose the interlayer dielectric.