| 摘要 |
A magnetoresistive effect element ( 1 ) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer ( 5 ) and magnetization free layer ( 7 )) is opposed to each other through an intermediate layer ( 6 ) to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface and in which the ferromagnetic material layers are annealed by anneal including rotating field anneal and the following static field anneal. A magnetic memory device comprises this magnetoresistive effect element ( 1 ) and bit lines and word lines sandwiching the magnetoresistive effect element ( 1 ) in the thickness direction. When the magnetoresistive effect element ( 1 ) and the magnetic memory device are manufactured, the ferromagnetic material layers ( 5, 7 ) are annealed by rotating field anneal and the following static field anneal. There are provided the magnetoresistive effect element that can obtain excellent magnetic characteristics by controlling magnetic anisotropies of the ferromagnetic material layers, the magnetic memory device including this magnetoresistive effect element and which may have excellent write characteristics, and methods for manufacturing these magnetoresistive effect element and magnetic memory device. |
