METHOD FOR FORMING SEMICONDUCTOR DEVICE HAVING PAD

摘要

PURPOSE: A method for forming a semiconductor device having a pad is provided to be capable of minimizing pad etching effect due to a developing solution used when patterning a polyimide layer. CONSTITUTION: After preparing a semiconductor substrate(101) having a pad(106a), an etching stop layer(107) is formed on the entire surface of the resultant structure. A passivation layer(108) is formed at the upper portion of the etching stop layer. A passivation contact hole(109) is formed by selectively patterning the passivation layer for exposing the predetermined portion of the etching stop layer. A polyimide layer(110) is formed on the entire surface of the resultant structure. After forming a pre-pad hole by patterning the polyimide layer using a developing solution for exposing the predetermined portion of the etching stop layer, a pad hole(120) is formed by etching the etching stop layer exposed through the pre-pad hole for exposing the pad.