| 摘要 |
The invention relates to the semiconductor technology and may be used in the electronics and power engineering. The process for polysulphide film obtaining includes treatment of the compounds ZnxIn2S3+x (x=1, 2, 3, 5) with ZnCl2 solution, deposition onto a support, preliminarily treated in ZnCl2 solution, with subsequent drying at the temperature of 373 K and thermal treatment at T?t (6,3-8,5)103 degree ? hour (where T and t -temperature and treatment time respectively).Claims: 1 |
