| 摘要 |
A semiconductor layer, including a source region, a channel region, and a drain region, is formed on a substrate, and a gate insulation film, formed of a silicon oxide film, is formed on the semiconductor layer. Subsequently, nitrogen atoms are introduced in the gate insulation film so that the nitrogen atoms exist in at least one of the silicon oxide film and an interface between the silicon oxide film and the semiconductor layer. Thereafter, a gate electrode film is formed on the gate insulation film. With this arrangement, good transistor characteristics can be maintained for a long period of time in a substrate device on which a TFT is formed, and further it is difficult for the substrate device to be affected by an environment in which it is used, such as by humidity, temperature, and the like.
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