| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to minimize focusing of electric field by rounding top corner portions of a trench. CONSTITUTION: A trench is formed at an isolation region of a semiconductor substrate(200). A liquid-phase oxide layer is filled in the trench and selectively etched by wet-etching. At this time, a pad oxide layer is under-cut. A metal silicide layer is formed on the exposed substrate by CVD. By etching the metal silicide layer, the top corner portion of the trench is rounded. The liquid-phase oxide layer is entirely removed. Then, an isolation layer(260) is formed in the trench.
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