Apparatus and method for fabricating semiconductor device

摘要

The present invention provides various measures for preventing particles from being deposited on objects being processed during plasma processing. An electrode is disposed inside a reaction chamber, which is kept in a vacuum state by a turbo molecule pump and a dry pump that are provided for a main exhaust pipe. A substrate is placed on the electrode, a gas is introduced into the reaction chamber and then a voltage is applied from an RF power supply to the electrode and the substrate, thereby generating plasma regions in the reaction chamber. A large number of exhaust pipes, each having an opening, are disposed on substantially the same plane as the plane on which the interface between a plasma glow region and a plasma sheath is located. These multiple openings surround the interface between the plasma glow region and the plasma sheath.