发明名称 |
Bilayer silicon carbide based barrier |
摘要 |
A bilayer SiC-based barrier is formed over a metallic wiring layer and a first dielectric layer. The bilayer SiC-based barrier consists of a nitrogen-doped SiC bottom layer and an oxygen-doped SiC top layer. The nitrogen-doped SiC bottom layer has a minimum thickness to prevent metal atoms of the metallic wiring layer from diffusing out to a second dielectric layer and, at the same time, avoid oxygen atoms of the oxygen-doped SiC top layer from diffusing into the metallic wiring layer.
|
申请公布号 |
US6670715(B2) |
申请公布日期 |
2003.12.30 |
申请号 |
US20010683245 |
申请日期 |
2001.12.05 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
YANG NENG-HUI;TSAI CHENG-YUAN;WU HSIN-CHANG |
分类号 |
H01L21/314;H01L21/768;H01L23/48;H01L23/532;H01L31/0328;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/314 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|