| 摘要 |
PURPOSE: A method for manufacturing a diffusion barrier layer of a semiconductor device is provided to be capable of reducing resistivity and obtaining dense crystal structure of a titanium nitride layer. CONSTITUTION: A TDEAT(Tetra kis Dimethyl Anomi Titanium) source(22) is vaporized on a semiconductor substrate(20). The TDEAT is pyrolyzed and Dimethyl radicals generating in the pyrolysis processing are removed by using an adsorbent. By flowing nitrogen gases in a deposition chamber, a titanium nitride layer(24) as a diffusion barrier layer is then formed.
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