发明名称 |
Silicon controlled rectifier structure with guard ring controlled circuit |
摘要 |
The present invention provides a PMSCR (bridging modified lateral modified silicon controlled rectifier having first conductivity type) with a guard ring controlled circuit. The present invention utilizes controlled circuit such as switch to control functionally of guard ring of PMSCR. In normal operation, the switch is of low impedance such that the guard ring is short to anode and collects electrons to enhance the power-zapping immunity. Furthermore, during the ESD (electrostatic discharge) event, the switch is of high impedance such that the guard ring is non-functional. Thus, the PMSCR with guard ring control circuit can enhance both the ESD performance and the power-zapping immunity in the application of the HV (high voltage) pad.
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申请公布号 |
US2003234405(A1) |
申请公布日期 |
2003.12.25 |
申请号 |
US20020178235 |
申请日期 |
2002.06.25 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LAI CHEN-SHANG;LIU MENG-HUANG;SU SHIN;LU TAO-CHENG |
分类号 |
H01L27/02;H01L27/08;H01L29/74;(IPC1-7):H01L29/74;H01L31/111 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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