| 发明名称 |
DEEP WORDLINE TRENCH TO SHIELD CROSS COUPLING BETWEEN ADJACENT CELLS FOR SCALED NAND |
| 摘要 |
A NAND flash memory structure and method of making a flash memory structure with a wordline that provides shielding from Yupin effect errors and from disturbs.
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| 申请公布号 |
US2003235078(A1) |
申请公布日期 |
2003.12.25 |
| 申请号 |
US20020175764 |
申请日期 |
2002.06.19 |
| 申请人 |
CHIEN HENRY;FONG YUPIN |
发明人 |
CHIEN HENRY;FONG YUPIN |
| 分类号 |
G11C16/04;G11C11/34;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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