| 发明名称 |
Process for direct deposition of ALD RhO2 |
| 摘要 |
The present invention provides methods of performing atomic layer deposition to form conductive, oxidation-resistant rhodium oxide films and films comprising metals, such as platinum, alloyed with rhodium oxide. The present invention also provides memory devices and processors comprising films deposited by the above methods.
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| 申请公布号 |
US2003233976(A1) |
申请公布日期 |
2003.12.25 |
| 申请号 |
US20020179946 |
申请日期 |
2002.06.25 |
| 申请人 |
MARSH EUGENE P.;UHLENBROCK STEFAN |
发明人 |
MARSH EUGENE P.;UHLENBROCK STEFAN |
| 分类号 |
C30B25/02;(IPC1-7):C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
C30B25/02 |
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