| 摘要 |
There is provided an electron beam control device which controls an electron beam for use, such as an electron microscope, an electron beam exposure device and the like wherein a track of an electron beam is not adversely influenced by the amount of magnetic variation occurring from surrounding influences. The electron beam control device which controls an electron beam for use, such as an electron microscope, an electron beam exposure device and the like wherein a magnetometric sensor for measuring an amount of magnetic variation which influences a track of the electron beam, occurring from surrounding influences, is provided.
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