| 发明名称 |
NANOTUBE PERMEABLE BASE TRANSISTOR |
| 摘要 |
A permeable base transistor (PBT) having a base layer including metallic nanotubes embedded in a semiconductor crystal material is disclosed. The nanotube base layer separates emitter and collector layers of the semiconductor material.
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| 申请公布号 |
US2003234407(A1) |
申请公布日期 |
2003.12.25 |
| 申请号 |
US20020175586 |
申请日期 |
2002.06.19 |
| 申请人 |
NANTERO, INC. |
发明人 |
VOGELI BERNHARD;RUECKES THOMAS;SEGAL BRENT M. |
| 分类号 |
H01L29/772;H01L51/30;(IPC1-7):H01L29/06;H01L31/032;H01L31/033;H01L31/072;H01L31/109 |
主分类号 |
H01L29/772 |
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