| 摘要 |
<p>The invention relates to a method for producing a ZnTe-based compound semiconductor single crystal, particularly to a technique applied to production of a high-resistance ZnTe-based compound semiconductor single crystal. The method is for producing a large-sized, high-resistance ZnTe-based compound semiconductor single crystal, and for producing a ZnTe or ZnTe-based compound semiconductor single crystal containing three or more elements including Zn and Te. In the method, a predetermined amount of one or more elements of 3d transition metals is added as impurities for creating an energy level near the center of the energy gap during the growth of the single crystal. The effect of the invention is to increase the resistance of the ZnTe-based compound semiconductor single crystal, and the ZnTe-based compound semiconductor single crystal is preferable to production of an E/O device used for oscillation or reception of ultra-high frequency higher than terahertzs.</p> |
