| 摘要 |
<p>A process comprising forming a titanium compound film on a substrate according to the sputtering technique with the use of, in place of the conventional metallic titanium target, a titanium target comprising a metal (such as tin or zinc) whose sputtering ratio in argon atmosphere is at least twice that of titanium; an article coated with a titanium compound film; and a sputtering target for use in the film coating. The content of tin or zinc in the titanium target comprising tin or zinc is preferably in the range of 1 to 45 atomic %, and may further be loaded with a third metal. These enable solving the drawbacks, such as low film forming rate and inability to apply high output power because of possibility of arcing, as encountered at the formation of a titanium compound film on the surface of a substrate, such as plate glass, according to the reactive sputtering technique.</p> |
