| 摘要 |
PURPOSE: A method for forming a fine via hole resist pattern is provided to be capable of embodying a fine hole pattern having a range of 0.13 μm, or less while using a KrF light source. CONSTITUTION: The first resist layer containing a predetermined crosslinkable agent, is coated at the upper portion of a semiconductor substrate(1). An exposure and post-exposure baking process are sequentially carried out at the first resist layer for forming a via hole resist pattern(10). The first resist pattern(3) including a hole pattern having the first width, is formed by developing the first resist layer. The second resist layer is coated on the entire surface of the resultant structure. The second resist pattern(5) is formed at the lateral wall of the hole pattern as a spacer by selectively etching the second resist layer.
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